Gallium Nitride (GaN) semiconductor device market is expected to grow at a considerable rate during the forecast period. GaN semiconductor devices provide high output power with small physical volume, and high efficiency at ultra-high and microwave radio frequencies.GaN semiconductors have better stability in some radiation environments and low sensitivity to ionizing radiation. The ability of GaN semiconductor to conduct electrons with 1000 times more efficient than silicon semiconductor has made them more preferable to be used by several industries such as automotive, defense and aerospace, and healthcare.Moreover, due to the depletion of sources of energy power devices are being optimized for energy saving purpose, thereby driving the growth of the GaN semiconductor device market.
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Additionally, the GaN semiconductor devices are used in lasers and photonics owing to their abilityto produceblue light that made disc reading possible. Dynamic electric and chemical properties of GaNsemiconductors make them the appropriate choice to use them in several varieties of switching devices. The automotive sector is estimated to emerge with HEV (Hybrid Electric Vehicles) and electric vehicles. Due to the increasing deployment of GaN semiconductor devices in HEV sector, the market for GaNsemiconductor is estimated to grow at a significant rate.
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In the era of technological development, the GaN semiconductor devices are considered to witness significant demand in the healthcare sector. Nowadays hospitals can be observed taking help of robots that are well equipped with GaN componentsfor the conduction of delicate surgeries. Moreover, the GaN semiconductor component is used in scanning equipment includinga miniature X-Ray machine, MRI, and sonograms owing to their precise positioning abilities that are helpful in performing surgeries. The growing utilization of the GaN semiconductors in healthcare is anticipated to make a significant contribution to the growth of the global GaN semiconductor devices market.
Recent activities
In March 2019, Alpha and Omega Semiconductor Ltd., supplier of a broad range of power semiconductors and power ICs had introduced the AONV070V65G1 Gallium Nitride 650V transistor, the initial product in the new αGAN Technology platform.
In May 2019, GaN Systems, supplier of gallium nitride power semiconductors to reveal the 650 V, 150 in Nuremberg, Germany. 650 V, 150 is a GaN powered transisterhaving the high current of 650 V.
In April 2018, Cree, Inc. had entered into a non-exclusive, royalty-bearing patent license agreement with Nexperia BV. The agreement facilitatesNexperiato access Cree’s extensive (GaN) power semiconductor device patent portfolio, which includes over 300 issued the US and foreign patents.
Gallium Nitride Semiconductors DevicesMarket Segmentation
ByEnd-User
Automotive
Consumer Electronics
Defense Equipment
Medical Devices
Others
By Devices Type
LED
Transistors
Nanotubes
Gallium Nitride Semiconductor DevicesMarket – Segment by Region
North America
United States
Canada
Europe
Germany
UK
France
Spain
Italy
Rest of Europe
Asia-Pacific
China
Japan
India
Rest of Asia-Pacific
Rest of the World
Middle-East, Africa
Latin America
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