We have realized, for the first time, a UV sensor that operates at temperatures up to 700°C by using N+ implantation into 6H-SiC.

The photocurrent of the sensor increased with temperature, and at 400°C and 700°C, the photocurrent is approximately double and triple that at room temperature (RT), respectively.

It was clarified that the temperature dependence of the photocurrent reveals the characteristics of absorption particular to indirect transition, and also the minority carrier diffusion length. Dark current increased rapidly at temperatures exceeding 450°C.

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