2MBI75P-120
ALLICDATA ELECTRONICS　LIMITED
Tel:852-30501886
[email protected]
https://www.allicdata.com

The company, founded in 2007, is an industry leading electronic zero component channel dealer. It has established a special business relationship with the original plant for many years. It specializes in the following active components (integrated circuit IC, storage chip, two, triode, etc.) and passive components (capacitance, resistance, inductance, etc.) and electromechanical components (connectors, Switching devices), we provide an omni-directional one station electronic component supply chain purchase scheme at low cost, including a series of supply chain solutions such as the low price material support for electronic components, the complete supply of electronic components, the long-term supply of the cost reduction of the electronic component BOM, the consignment of stock and so on.

Main range: main electronic IC, two or three pole tube. Long ready spot: RF power pipe (MOTOROLA, FUJISTU, PHILIPS, INFINEON, FREESCALE), amplifier module (800NHZ, 900MHZ, 1900MHZ, 2.5GHZ), isolator, circulator, coupler, load resistance, fiber connection line, VCOS and so on. Meanwhile, distribution of imported Panasonic (NAIS), OMRON N), Gao Ze Ze (TAKAMISAWA) and other relays. TV IC.It has rich experience in the design and application of LED power. Power module /IPM.PIM.IGBT.GTR. SCR, rectifier.DC-DC.AC-AC.DC-AC and other series; STUD PACKAGE, imported rectifier diode, Schott diode, voltage regulated diode, fast thyristor: (package: DO-4 DO-5 DO-8 DO-9 DO-30) TO-64 TO-60 TO-63 TO-48 TO-65 TO-94 TO-83 TO-93 TO-200AA TO-200AB TO-200AC TO-200AD); optocoupler, Ling, memory, Ling, power management, two or three pole, capacitance resistance and other brands of the world.

Description:
1. IGBT is a functional integration of Power MOSFET and BJT devices in monolithic form
2. IGBT combines the best attributes of both to achieve optimal device characteristics. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode.
3. All componentsand interconnects are isolated from the heat sinking, baseplate,offering simplified system assembly.
Feature:
1. Square RBSOA
2. Low Saturation Voltage
3. Overcurrent Limiting Function (~3 Times Rated Current)
4. IGBT is three-terminal power semiconductor device
5. High Frequency Operation