Power semiconductor device is widely used as a rectifier or a switch in power electronics. Improvements in metal oxide semiconductor technology led to the development of power MOSFET (Metal Oxide Semiconductor Field Effect Transistor), which was used in low voltage applications and was better than a bipolar transistor. IGBT or Insulated-Gate Bipolar Transistor was introduced later to utilize the best of both bipolar transistor and MOSFET: low saturation voltage of bipolar transistor and high switching speeds of MOSFET. In 2012, the combined global IGBT and super junction MOSFET market was worth US$4,776.2 million and is expected to grow consistently at a CAGR of 11.6% from 2013 to 2019 to reach a valuation of US$10,100 million by 2019.

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Growing Market for Smart Grids to Push Global IGBT and Super Junction MOSFET Market

Growing emphasis on higher energy efficiency is one of the major factors pushing the growth of the global market for IGBT and super junction MOSFET. IGBT makes an ideal semiconductor switching device owing to its ability to handle large collector-emitter currents with zero gate current drive. The high switching speeds of super junction MOSFET has led to their usage as common-source amplifiers and electronic switches. Deployment of IGBT and super junction MOSFET in hybrid electric vehicles is expected to further boost the overall market.However, competition from other power semiconductors will hamper the growth of the IGBT and super junction MOSFET market. Growing market for smart grids is expected to open new opportunities for the overall market during the period between 2013 and 2019.

IGBT Modules had Highest Demand in 2012

On the basis of the product type, the global IGBT market is broadly classified into IGBT module and discrete IGBT. IGBT modules accounted for 64% in the total market revenue in 2012 owing to the increased demand from electric and hybrid vehicles, and photovoltaic inverters. Discrete super junction MOSFET and super junction MOSFET module are the two types of super junction MOSFET.

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Electric Vehicles to Drive the Demand from Global IGBT and Super Junction MOSFET Market

IGBT and super junction MOSFET are widely used in wind turbines, consumer applications, hybrid electric vehicles, industrial applications, motor drives, lighting, rail traction, photovoltaic inverter, uninterrupted power supply, converters, adapters, and chargers, and others including telecom, servers, and networking devices. Industrial applications segment drove the demand from the IGBT market in 2012, closely followed by motor drives segment. In the coming years, application of IGBT in electric vehicles segment is expected to increase tremendously, making it the fastest growing application segment, developing at a CAGR of 21.1% between 2013 and 2019. In 2012, converters, adapters, and chargers was the largest application segment of super junction MOSFET market. Electric vehicles application segment of the super junction MOSFET market is expected to grow at a CAGR of 30% from 2013 to 2019 and emerge as the fastest growing application segment.

Asia Pacific to Dominate Global IGBT and Super Junction MOSFET Market during 2013-2019

Among the key geographical regions of the market, Asia Pacific turned out to be the biggest market for IGBT and super junction MOSFET in 2012, with 39% in the total revenue. In the forthcoming years, the region is expected to display the fastest growth due to the growing electronics manufacturing industries in Taiwan, South Korea, and China.

Key Players in Global IGBT and Super Junction MOSFET Market

Some of the key players of the global IGBT and super junction MOSFET market are Mitsubishi Electric Corporation, Infineon Technologies AG, Toshiba Corporation, and Fuji Electric Co. Ltd. Mitsubishi and Infineon together dominated the overall market in 2012.

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