The key factors driving the growth of the DRAM module and components market include emergence of 5G technology, growth in demand for DRAM module and components in automotive sector, growth in adoption of high-end smartphones, and others.


Global DRAM module and components market was valued at USD 94.9 billion in 2021 and is expected to reach USD 110.7 billion by 2027, at a CAGR of 1.2% during the forecast period from 2022 to 2027.


Download Free Brochure:

https://www.marketsandmarkets.com/pdfdownloadNew.asp?id=105922994


The emergence of the 5G cellular network has opened more lanes on the information superhighway, enabling vast amounts of data to move faster and more freely, reducing traffic jams. Enabled by innovations in memory and storage, 5G, coupled with next-generation technologies such as artificial intelligence (AI), shows enormous promise to transform mobile devices into prescient, intuitive, and truly smart companions. The 5G/AI revolution stands to change the way people communicate, work, consume, recreate, and experience.


Internet of Things (IoT) allows physical and virtual objects to connect through cloud technology and exchange data and information. IoT is not just a network of internet-connected things but is a network of machines and humans. IoT refers to the ever-growing network of physical objects and the communication that occurs between these objects and other internet-enabled devices and systems.


DRAM makers are pushing into the next phase of scaling but are facing several challenges as the memory technology approaches its physical limit. DRAM is used for main memory in systems, and the most advanced devices used today are based on roughly 18nm to 15nm processes. The physical limit for DRAM is somewhere about 10nm. There are efforts in R&D to extend the technology and ultimately displace it with new memory types, but so far, there is no direct replacement. Until a new solution is in place, the vendors will continue to scale the DRAM and eke out more performance, though in incremental steps at the current 1nm node regime. And at future nodes, some DRAM makers will make a big transition from traditional lithography to extreme ultraviolet (EUV) lithography for production in the fab.