The Silicon on Insulator Market share is projected to reach USD 2.9 billion by 2027 from an estimated USD 1.4 billion in 2022, at a CAGR of 15.0% from 2022 to 2027.

Surging adoption of FD-SOI in IoT devices and ML applications and establishment of facilities to enhance SOI production are among the factors driving the growth of the SOI market.

Soitec (France), Shin-Etsu Chemical (Japan), GlobalWafers (Taiwan), SUMCO Corporation (Japan), Shanghai Simgui Technology (China), GlobalFoundries (US), STMicroelectronics (Switzerland), Tower Semiconductor (Israel), NXP Semiconductors (Netherlands), Murata Manufacturing (Japan), are some of the silicon on insulator companies.

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Driver: Rising demand for 5G in mobile communications


5G services began in 2019, with 6G projected in 2030. 5G is a significant step from 4G, boasting ten times the reaction and data transmission speeds. Furthermore, its speed, low latency, and reliability will open numerous applications. Power amplifiers, switches, adjustable capacitors, and filters are commonly found in radiofrequency (RF) front-end modules (FEM) found in smartphones and tablets. Mobile devices use RF silicon-on-insulator (RF-SOI) to adjust and hold cellular signals, giving them clear connections from a wider range of locations. SOI wafers continue to be popular in the mobile market because they provide low insertion loss, minimal harmonics, and strong linearity over a wide frequency range at a reasonable cost. Emerging technologies such as FD-SOI/RF-SOI can help systems deliver high speed/bandwidth at low power. Thus, the rising demand for 5G in mobile communications is expected to accelerate market growth.

Opportunity: Surging adoption of FD-SOI in IoT devices and ML applications


The increasing use of FD-SOI in digital electronics creates opportunities for new IoT devices and applications as this technology ensures ultra-low power consumption, ultra-low current leakage, small and dense packaging, and the cost-efficiency of IoT devices. FD-SOI wafer-based devices have reverse bias characteristics, which help them operate at low voltages without area or cost penalties. Hence, FD-SOI is the most effective technique used in IoT devices. The increasing deployment of FD-SOI-based IoT solutions in automotive and network infrastructure applications is expected to provide opportunities for the growth of the SOI market. FD-SOI is also gaining ground in machine learning. ML techniques can significantly speed up the design space exploration for power devices, eventually reducing product-to-market time. Moreover, the breakdown voltage prediction using machine learning models in SOI wafer-based devices can dramatically shorten the inference time.

Challenge Process control in Silicon on Insulator wafers and circuit design complexity


The complex semiconductor manufacturing process poses hurdles in establishing the processes required for next-generation SOI technology, reducing the process’s systematic errors. Another issue with SOI has been circuit design, which necessitates new techniques from a technical standpoint. The SOI circuit designer must better understand the underlying device physics and processes; not doing so will present challenges during fabrication due to manufacturing and metrology problems.