The RF power semiconductor market is estimated to grow from USD 10.57 Billion in 2015 to USD 31.26 Billion by 2022, at a CAGR of 15.4% between 2016 and 2022. The base year considered for the study is 2015 and the market size forecast is given for the period between 2016 and 2022.

The RF power semiconductor devices are used in application areas such as aerospace, automotive, military, medical, energy, consumer, telecommunication and data communication, and so on. In the last few years, new improved materials such as gallium nitride (GaN) are increasingly being used in RF power semiconductor devices.

The objectives of the report include defining, describing, and forecasting the global radio frequency (RF) power semiconductor market on the basis of RF power product, material, frequency, application, and geography. The objective of the report also includes the necessity to provide detailed information regarding the major factors influencing the growth of the market (drivers, restraints, opportunities, and industry-specific challenges).

The value chain of the RF power semiconductor market includes the RF power devices manufacturers such as Infineon Technologies AG (Germany), M/A-COM Technology Solutions Holdings, Inc. (U.S.), NXP Semiconductors N.V. (Netherlands), Qorvo, Inc. (U.S.), Broadcom Limited (U.S.), Toshiba Corporation (Japan), Qualcomm Inc. (U.S.), Skyworks Solutions, Inc. (U.S.), Mitsubishi Electric Corporation (Japan), and Murata Manufacturing (Japan).

The RF power amplifiers held the largest share of the RF power semiconductor market in 2015. The RF power amplifiers have applications in sectors such as aerospace & defense, automotive, medical, telecommunication and data communication, consumer, and others. The other devices such as RF duplexers and RF switches are also expected to witness high growth in the RF power semiconductor market.

The RF power semiconductor market for the frequency band 10 GHz to 20 GHz is expected to hold the largest market size during the forecast period. Satellite communication is the major application for this range in the RF semiconductor market. This band is also used for fixed and broadcast services and for specific applications by the National Aeronautics and Space Administration (NASA) (U.S.). Furthermore, it is used for backhauls and for satellites from remote locations for editing and broadcasting to a TV network studio.

The RF power semiconductor market on the basis of materials was dominated by gallium arsenide. Gallium arsenide material has higher electron mobility than silicon. It is used on a large scale for monolithic microwave integrated circuit (MMIC) applications. The market for gallium nitride is expected to grow at the highest CAGR in the RF power semiconductor market.

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