Gallium nitride, or GaN, is a hard semiconductor exhibiting various chemical properties due to which it finds suitability in multiple manufacturing processes. The global GaN semiconductor devices market has witnessed tremendous growth in the last couple of years fuelled by the rapid expansion of the manufacturing industry. The GaN semiconductor market currently faces stiff competition from SiC (silicon carbide) conductor devices. However, escalating popularity and increasing application of GaN semiconductor devices is likely to deliver a competitive edge to the GaN market over its contemporaries.

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Industry-Wise Applications of GaN Semiconductor Devices

GaN demonstrates dynamic chemical and electric properties such as high velocity of saturation and high voltage breakdown, which makes this component an impeccable choice for application across a plethora of switching devices. Using GaN in semiconductor devices helps reduce the product cost and eliminates cooling requirements, which is why, compared to other market alternatives such as gallium arsenide and silicon, the demand for GaN has been expanding at an impressive rate. The demand for energy-efficient semiconductors has significantly increased in the last couple of years, which also attributed to the expansion of the GaN semiconductor devices market. Additionally, increased application of GaN across the industrial sector, consumer electronics, computers, the automotive sector, and ICT has also aided the growth of the market.

Military emerged as the largest application segment for GaN semiconductor devices. The sector exhibits a continuous demand for enhancing performance, which is expected to drive the demand for GaN semiconductor devices in the forthcoming years. Consumer electronics is also expected to sustain its dominant position in the GaN semiconductor devices market during the forecast period.

Based on individual product categories, GaN is used on a large scale in the manufacture of opto semiconductors. However, power semiconductors are likely to register the fastest growth between 2013 and 2019 owing to incessantly increasing demand for GaN semiconductors from the military and industrial sectors for enhanced performance.

Asia Pacific to Register Tremendous Growth in Demand for GaN Semiconductor Devices

Of the key geographic segments, North America accounted for 32% of the global GaN semiconductor devices market in 2012, making the region the largest market for GaN semiconductors. High penetration of GaN semiconductor technology in defense and aerospace sectors in this region significantly contributed to the development of the market. Nevertheless, in the forthcoming years, Asia Pacific is expected to emerge as the largest GaN semiconductor devices market owing to the rapid expansion of industrial verticals including the consumer electronics and automotive sectors.

Some of the players who have successfully made their presence felt in the highly fragmented GaN semiconductor market are Fujitsu Limited (Japan), Nichia Corporation (Japan), Freescale Semiconductors Incorporated (U.S.), GaN Systems Inc (Canada), RF Micro Devices Inc. (U.S.), Cree Inc (U.S.), and International Rectifier Corporation (U.S.)