The gallium nitride semiconductor device market is expected to reach USD 22.47 Billion by 2023
at a CAGR of 4.6% during the forecast period.
The major factors that are expected to be driving the market are the vast addressable market for gallium nitride in consumer electronics and automotive, wide bandgap property of gallium nitride material encouraging innovative applications, success of gallium nitride in RF power electronics, and increasing adoption of gallium nitride RF semiconductor device in military, defense, and aerospace application.
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Increasing adoption of GaN RF semiconductor devices in military, defense, and aerospace applications
Increased use of RF power in military, defense, and aerospace applications acts as a driver for the growth of the gallium nitride semiconductor device market. The use of RF power devices in avionics and radar systems is fueling the demand for GaN RF semiconductor devices in military, defense, and aerospace applications across the globe. In March 2015, M/A-COM Technology Solutions Inc. launched a 650 W GaN on silicon carbide high-electron-mobility-transistor (HEMT) for L-band pulsed avionics applications. The use of GaN to develop new and advanced products is expected to contribute to the growth of the gallium nitride semiconductor device market. In May 2015, Qorvo, Inc. launched a series of GaN power amplifiers with improved efficiency, gain, and power performance for military satellite and commercial VSAT applications. In September 2015, the company launched 3 new highly reliable and compact GaN RF transistors in plastic packages for use in civilian marine, airborne, and infrastructure radar systems.
Growing competition from SiC in high-voltage semiconductor applications
Silicon carbide (Sic) power semiconductor devices, since their launch at the commercial level in 2001, have been trying to penetrate the power semiconductor device market globally by replacing pure silicon. These devices offer improved power efficiency and advanced power handling capacity in terms of power rectification, power factor correction, power amplification, and power transmission. In high-voltage range applications, SiC semiconductor devices are the best choice in terms of their power efficiency and performance than their GaN counterparts. For instance, at the border-line voltages between medium and high voltages, ranging from 700V to 1,200V, the efficiency of GaN devices reduced considerably. Thus, the preference of SiC power semiconductor devices over GaN power semiconductor devices in power applications acts as a restraint for the growth of the gallium nitride semiconductor device market.
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The key players in this industry are Cree (US), Samsung (South Korea), Infineon (Germany), Qorvo (US), MACOM (US), Microsemi Corporation (US), Analog Devices (US), Mitsubishi Electric (Japan), Efficient Power Conversion (US), GaN Systems (Canada), Exagan (France) , VisIC Technologies (Israel), Integra Technologies (US), Transphorm (US), Navitas Semiconductor (US), Nichia (Japan), Panasonic (Japan), Texas Instruments (US), Ampleon (Netherlands), Sumitomo Electric (Japan), Northrop Grumman Corporation (US), Dialog Semiconductor (UK), and Epistar (Taiwan).
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