Gallium oxide (Ga₂O₃) is emerging as the next-generation power semiconductor material following SiC (silicon carbide) and GaN (gallium nitride). South Korean companies and institutions are accelerating efforts to secure technology related to gallium oxide. However, in the race to secure patents, Korea still lags behind Japan and China.
On the 23rd, the Korea Semiconductor Industry Association held a seminar at its headquarters in Pangyo, focusing on the "Gallium Oxide Power Semiconductor Technology Roadmap."
Gallium oxide, like SiC and GaN, is categorized as a wide bandgap (WBG) material, which allows devices to operate at higher voltages, temperatures, and frequencies. The bandgap refers to the energy difference between the conduction band (where electrons move freely) and the valence band (where electrons are inactive). A wider bandgap enables greater electronic freedom, enhancing performance under extreme conditions.
Gallium oxide stands out with a bandgap of 4.4 to 4.9, compared to SiC's 3.3 and GaN's 3.4. Additionally, it is more cost-effective to produce than other WBG materials, which indicates significant mid- to long-term growth potential in the gallium oxide market.
Bae Si-young, a member of the Korea Institute of Ceramic Engineering and Technology, cited a report by Yano Research Institute in Japan, stating that the gallium oxide substrate market is expected to grow sixfold in five years, reaching approximately 22 billion KRW by 2025. Furthermore, by 2030, the global gallium oxide market could reach a scale of 1.7 trillion KRW.
However, gallium oxide still faces physical limitations, such as low electrical conductivity, and remains at an earlier stage of research and development compared to other WBG materials. Thus, global semiconductor companies and research institutions are racing to gain an early foothold in the gallium oxide market.
Patent Competition: China and Japan Lead
The gallium oxide market is currently dominated by countries like the United States, Japan, and China. For instance, in the area of single-crystal substrates, Korea's technological capabilities are only 25% of those of Japan’s NCT. For wafer materials, Korea's capabilities are about 66% of NCT’s level.
The patent landscape reflects this disparity. According to an analysis by AnA Patent across six categories (Korea, China, the U.S., Europe, Japan, and PCT), there were 1,011 valid patents related to gallium oxide power semiconductor devices as of September 2021. Among these, China held 328 patents, and Japan held 313, together accounting for over 50% of the total. Korea, by comparison, held only 57 patents.
From September 2021 to November 2022, an additional 460 patents were filed, with most of them coming from China (240) and Japan (87). During the same period, Korea filed just 23 new patents.
Hong Seung-hoon, a patent attorney at AnA Patent, emphasized, “The number of patents related to gallium oxide power semiconductor devices increased by nearly 50% in just one year and two months, indicating an active patent race among countries. While patents alone do not determine actual technological capabilities, the sheer volume of patents from China and Japan is noteworthy.”
Korea's Efforts to Catch Up
Despite the challenges, efforts are underway in Korea to enhance technological capabilities in gallium oxide. In 2021, the K-Gallium Oxide Alliance (K-GOAL) was launched, sponsored by the Ministry of Science and ICT, the Ministry of Trade, Industry and Energy, and the Ministry of SMEs and Startups. K-GOAL, in collaboration with the Korea Semiconductor Research Cooperative, is working on strengthening technology across areas like substrates, processing, and commercialization.
Additionally, domestic companies such as Quanta Materials and Nexus B are developing related products. PowerCube Semi is collaborating with Hyundai Motor Company on gallium oxide semiconductor devices.
Ahn Ki-hyun, Executive Director of the Korea Semiconductor Industry Association, stated, “Gallium oxide is gaining attention as the next compound semiconductor material following SiC and GaN. To secure technological leadership in this field, we are preparing a preliminary feasibility study for a support project worth 440 billion KRW.”