Next-Generation Memory Market Scenario:
Next generation memory can be defined as a common label applied to a major upgrade of hardware or a software product. The next generation memory market has grown over the last few years because of the increasing demand for faster, efficient and cost effective memory solutions. These memory solutions are used across various verticals.
The key drivers contributing to the growth of the Global Next-Generation Memory Market are power efficiency, intrinsic benefit with non-volatile memories, high growth in the wearable electronics industry, technological advancements for storage, rise in the usage of next generation memory in smart phones, increasing adoption of MRAM & PCM memory and enterprise storage.
However, high cost, low stability during environmental conditions, intense competition and issues related to storage density are the factors hindering the growth of the next-generation memory market.
Geographically, North-America accounted for the largest market share in the global next-generation memory market, whereas Asia-Pacific is expected to grow over the forecast period.
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Major Key Players:
• Toshiba Corporation (Japan)
• SK Hynix Semiconducto, Inc. (South Korea)
• Adesto Technologies Corporation, Inc. (U.S.)
• Fujitsu Ltd. (Japan)
• IBM Corporation (U.S.)
• SanDisk Corporation (U.S.)
• Samsung Electronics Co., Ltd. (South Korea)
• Intel Corporation (U.S.)
• Micron Technology, Inc.

Regional Analysis:
Regionally, North America accounted for the largest market share, majorly due to high investments for technologically advanced products and increasing adoption of MRAM, DRAM and PCM memory.
Asia-Pacific is expected to grow over the forecast period, 2017-2022 majorly due to increasing demand for smart phones and tablets and manufacturing hub for wearable electronics.
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Next Generation Memory Market Segmentation:
The next generation memory Market can be segmented in to 4 key dynamics for the convenience of the report and enhanced understanding;
• Segmentation by technology: Comprises Non-volatile Memories (Phase Change Memory, Magneto-Resistive Random Access Memory (MRAM), Resistive Random Access Memory (Re RAM), Ferroelectric RAM (FeRAM)), Volatile Memories (Static Random Access Memory (SRAM), Dynamic Random Access Memory (DRAM)
• Segmentation by Application: Comprises Consumer Electronics, enterprise storage, automotive and transportation, military and aerospace, telecommunications and many more.
• Segmentation by wafer size: Comprises 200mm, 300mm, 450mm.
• Segmentation by Regions: Comprises Geographical regions - North America, Europe, Asia Pacific and Rest of the World.

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