A power amplifier that accepts a low-power input from a controller integrated circuit and produces a high-current drive input for the gate of a high-power transistor is called as a gate driver. Two types of high-power transistors include IGBT and MOSFET. The controlled oxidation of silicon leads to the formation of metal-oxide-semiconductor field-effect transistor (MOSFET). The conductivity of a device is determined by the voltage of the insulated gate. An insulated-gate bipolar transistor (IGBT) is used as an electronic switch. Most of the power MOSFETs and IGBTs are driven by gate drivers IC. MOSFET gate driver is a specialized circuit that is used to drive the gate of power MOSFETs effectively and efficiently in high-speed switching applications.

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MOSFET and IGBT gate drivers are available in different types, which include single channel gate drivers, half-bridge gate drivers, full bridge gate drivers, and three phase gate drivers. Increasing use of MOSFET and IGBT gate drivers in applications such as home appliances, automotive, display & lighting, power supply, and others is driving growth of the market.However, the inability of isolation techniques to handle duty cycle of over 50% duty cycle and low efficiency of MOSFET and IGBT gate drivers are major restraints of the MOSFET and IGBT gate driver market.
Key Developments in MOSFET and IGBT Gate Driver Market
Key players are adopting various strategies such as mergers, acquisitions, new product launches, expansions, collaborations, partnerships, approvals, and joint ventures to retain its position in the market. On May 18, 2018, Infineon invested US$1.8 billion in new 300-millimeter chip factory in Austria, as a part of their preparation for long-term growth. Also, on May 11, 2018, they launched a new development center for automotive electronics and artificial intelligence in Dresden.
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Moreover, on May 8, 2018, ON Semiconductor acquired SensL Technologies Ltd., a leading provider of SiPM, SPAD, and LiDAR sensing products. On March 5, 2018, they launched a new high efficiency controller solutions for LED lighting applications.
On March 6, 2018, Analog Devices, Inc. in collaboration with Microsemi Corporation introduced the high power evaluation board for half-bridge SiC power modules with up to 1200 V and 50 A @ 200 kHz switching frequency.
Some of the major players operating in the MOSFET and IGBT gate driver market include Infineon Technologies, ON Semiconductor, STMicroelectronics, ROHM Semiconductor, NXP Semiconductors, Texas Instruments, Microchip, Power Integrations, Inc., Vishay, Broadcom, Analog Devices, IXYS, Toshiba, Renesas, and Powerex among others.
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