Insulated Gate Bipolar Transistors (IGBTs) and Metal Oxide Field Effect Transistor (MOSFETs)


Posted November 7, 2017 by kishor8796

The report on Global Insulated Gate Bipolar Transistors (IGBTs) and Metal Oxide Field Effect Transistor (MOSFETs) Market provides qualitative and quantitative analysis for the period of 2015 to 2023.

 
The report on Global Insulated Gate Bipolar Transistors (IGBTs) and Metal Oxide Field Effect Transistor (MOSFETs) Market provides qualitative and quantitative analysis for the period of 2015 to 2023. According to report the Global Insulated Gate Bipolar Transistors (IGBTs) and Metal Oxide Field Effect Transistor (MOSFETs) Market is expected to grow at a CAGR between12.0% to 12.5% over the forecast period of 2017 - 2023.The Global market for Insulated Gate Bipolar Transistors (IGBTs) and Metal Oxide Field Effect Transistor (MOSFETs) was valued at USD 4785.6 million in 2013 and is expected to reach around USD XX billion by 2023.

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Market Insights:
IGBT aims to deliver faster switching rate and higher efficiency to enable proper operations at high voltage or high current. In addition, it can be used for dynamic breaking, where the power is dissipated by resistors that are connected in parallel or in series. It is widely used in high power rating applications, which include electric vehicle motor drives, inductive heating cookers, and appliance motor drives.

Segments Covered
The report on Global Insulated Gate Bipolar Transistors (IGBTs) and Metal Oxide Field Effect Transistor (MOSFETs) Market covers Segments such as Type, Power ratingand Application.The type segment is bifurcated into discrete IGBT and IGBT modules. The power rating segment includes high power, medium power, and low power IGBTs. Based on application, the market is segment into energy & power, consumer electronics, inverter & UPS, electrical vehicle, industrial system, and others.


Companies Covered
Fairchild Semiconductor International Inc.
STMicroelectronics N.V.
ABB Ltd.
Hitachi Power Semiconductor Device Ltd.
Toshiba Corporation
Mitsubishi Electric Corporation
Infineon Technologies AG.
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Key topics covered:
1. Preface
2. Executive summary
3. Global Insulated Gate Bipolar Transistors (IGBTs) and Metal Oxide Field Effect Transistor (MOSFETs) market Overview
4. Global Insulated Gate Bipolar Transistors (IGBTs) and Metal Oxide Field Effect Transistor (MOSFETs) market Analysis by Type 2017 - 2023
5. Global Insulated Gate Bipolar Transistors (IGBTs) and Metal Oxide Field Effect Transistor (MOSFETs) market Analysis, by Power rating 2017 - 2023
6. Global Insulated Gate Bipolar Transistors (IGBTs) and Metal Oxide Field Effect Transistor (MOSFETs) market Analysis, by Application 2017 - 2023
7. Global Insulated Gate Bipolar Transistors (IGBTs) and Metal Oxide Field Effect Transistor (MOSFETs) market Analysis, by Region 2017 - 2023
8 Companies Covered
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Issued By Infinium Global Research
Country India
Categories Health
Last Updated November 7, 2017