Thermal Desorption Spectroscopy (TDS) is a device to measure and analyze desorbed gas from the surface of the sample by heating the temperature of the sample. It can take precise information about the binding energy of each molecule. It is possible to check the change and composition of the gas in ultra - high vacuum area until trace amount and to measure the change according to the temperature and time as qualitative and quantitative. The sensitivity is best in analysis technology and superior in safety because it is chemical free.
What is TDS?
TDS is a device to measure and analyze the gas separated from the surface of the sample increasing the temperature of sample. It is used for analysis and prevention of the cause by qualitative and quantitative analysis of the emission gas generated during the process. Thermal Desorption Spectroscopy
Why TDS?
Simple Idea:
Adsorbed particles with different binding energies will desorb at different temperature.
Applications
- Semiconductor and display material analysis
- Vehicle and steel material hydrogen analysis
- Ultrapure material and trace amount analysis
fTDS(Thermal Desorption Spectroscopy for Semiconductor Wafer)
Wafer real - time measuring diagnosis technology development is based on various academic
foundation and highest level technology, and especially, it requires the integration of fusion
technology and advanced cutting edge convergence technology such as advanced vacuum
technology, impurities measuring diagnosis, extremely pure environment maintenance, process
control, mapping and so on. Semiconductor vacuum technology
▶ Specification
• Sample Description: ≤ Ø300 mm wafer
• Mass Range: (1 ~ 512) amu
• Full Heating: up to 950 ℃
• Local Heating: up to 1,400 ℃
• Base Pressure:
* process chamber, 5 × 10-7 mbar
* measurement chamber, < 5 × 10-9 mbar
• DAQ System: automated fully, wafer loading to measurement through data analysis